Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation

Journal Article · Sun Feb 09 23:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4865407· OSTI ID:22283177

Zheng, H.; Shohet, J. L. ^[1]; King, S. W. ^[2]; Ryan, V. ^[3]; Nishi, Y. ^[4]

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1. Plasma Processing and Technology Laboratory, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
2. Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States)
3. GLOBALFOUNDRIES, Albany, New York 12203 (United States)
4. Stanford University, Stanford, California 94305 (United States)

Vacuum ultraviolet (VUV) photoemission spectroscopy is used to investigate the effect of VUV radiation on porous organosilicate (SiCOH) dielectrics during plasma processing. By comparing photoemission spectroscopic results before and after VUV exposure, VUV irradiation with photon energies less than 9.0 eV was found to be beneficial in depleting accumulated charge in SiCOH films while VUV photons with higher energies did not have this effect. Moreover, VUV irradiation with 8.9 eV photons depletes the most charge. From this result, it can be concluded that 8.9 eV is the bandgap plus the electron affinity energy of SiCOH dielectrics.

• OSTI ID: 22283177
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AFFINITY
COMPARATIVE EVALUATIONS
DIELECTRIC MATERIALS
ELECTRONIC STRUCTURE
EMISSION SPECTROSCOPY
ENERGY GAP
FAR ULTRAVIOLET RADIATION
IRRADIATION
ORGANIC SILICON COMPOUNDS
PHOTOEMISSION
PHOTONS
POROUS MATERIALS
SILICATES
THIN FILMS