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Title: Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition

Abstract

The influence of N{sub 2} concentration (1%–8%) in CH{sub 4}/H{sub 2}/N{sub 2} plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH{sub 4}/H{sub 2} plasma contained micron-sized diamond grains, the films grown using CH{sub 4}/H{sub 2}/(4%)N{sub 2} plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.

Authors:
 [1];  [2]; ;  [3];  [4]; ;  [5];  [1];  [6];  [7]
  1. Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland)
  2. (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)
  3. Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)
  4. (Belgium)
  5. Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland)
  6. (United States)
  7. Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)
Publication Date:
OSTI Identifier:
22590781
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 108; Journal Issue: 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; DIAMONDS; DOPED MATERIALS; ELLIPSOMETRY; GRAIN BOUNDARIES; METHANE; MICROWAVE RADIATION; NITROGEN; PLASMA; REFRACTIVE INDEX; ROUGHNESS; THICKNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Ficek, Mateusz, E-mail: rbogdan@eti.pg.gda.pl, Institute for Materials Research, Sankaran, Kamatchi J., Haenen, Ken, IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek, Ryl, Jacek, Darowicki, Kazimierz, Bogdanowicz, Robert, Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125, and Lin, I-Nan. Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition. United States: N. p., 2016. Web. doi:10.1063/1.4953779.
Ficek, Mateusz, E-mail: rbogdan@eti.pg.gda.pl, Institute for Materials Research, Sankaran, Kamatchi J., Haenen, Ken, IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek, Ryl, Jacek, Darowicki, Kazimierz, Bogdanowicz, Robert, Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125, & Lin, I-Nan. Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition. United States. doi:10.1063/1.4953779.
Ficek, Mateusz, E-mail: rbogdan@eti.pg.gda.pl, Institute for Materials Research, Sankaran, Kamatchi J., Haenen, Ken, IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek, Ryl, Jacek, Darowicki, Kazimierz, Bogdanowicz, Robert, Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125, and Lin, I-Nan. Mon . "Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition". United States. doi:10.1063/1.4953779.
@article{osti_22590781,
title = {Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition},
author = {Ficek, Mateusz, E-mail: rbogdan@eti.pg.gda.pl and Institute for Materials Research and Sankaran, Kamatchi J. and Haenen, Ken and IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek and Ryl, Jacek and Darowicki, Kazimierz and Bogdanowicz, Robert and Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125 and Lin, I-Nan},
abstractNote = {The influence of N{sub 2} concentration (1%–8%) in CH{sub 4}/H{sub 2}/N{sub 2} plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH{sub 4}/H{sub 2} plasma contained micron-sized diamond grains, the films grown using CH{sub 4}/H{sub 2}/(4%)N{sub 2} plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.},
doi = {10.1063/1.4953779},
journal = {Applied Physics Letters},
number = 24,
volume = 108,
place = {United States},
year = {Mon Jun 13 00:00:00 EDT 2016},
month = {Mon Jun 13 00:00:00 EDT 2016}
}