Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition
- Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland)
- Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium)
- Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland)
- Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)
The influence of N{sub 2} concentration (1%–8%) in CH{sub 4}/H{sub 2}/N{sub 2} plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH{sub 4}/H{sub 2} plasma contained micron-sized diamond grains, the films grown using CH{sub 4}/H{sub 2}/(4%)N{sub 2} plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.
- OSTI ID:
- 22590781
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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