Tuning and stabilizing topological insulator Bi{sub 2}Se{sub 3} in the intrinsic regime by charge extraction with organic overlayers
- Department of Material Science and Engineering, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854 (United States)
- Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854 (United States)
In this work, we use charge extraction via organic overlayer deposition to lower the chemical potential of topological insulator (TI) Bi{sub 2}Se{sub 3} thin films into the intrinsic (bulk-insulating) regime. We demonstrate the tuning and stabilization of intrinsic topological insulators at high mobility with low-cost organic films. With the protection of the organic charge extraction layers tetrafluorotetracyanoquinodimethane or tris(acetylacetonato)cobalt(III) (Co(acac){sub 3}), the sample is stable in the atmosphere with chemical potential ∼135 meV above the Dirac point (85 meV below the conduction band minimum, well within the topological insulator regime) after four months, which is an extraordinary level of environmental stability. The Co complex demonstrates the use of an organometallic for modulating TI charge density. The mobility of surface state electrons is enhanced as high as ∼2000 cm{sup 2}/V s. Even at room temperature, a true topologically insulating state is realized and stabilized for months' exposure to the atmosphere.
- OSTI ID:
- 22590725
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 22; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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