Structure and chemistry of passivated SiC/SiO{sub 2} interfaces
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States)
- Power Devices R&D, Wolfspeed, A Cree Company, Research Triangle Park, North Carolina 27709 (United States)
Here, we report on the chemistry and structure of 4H-SiC/SiO{sub 2} interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO{sub 2} interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility.
- OSTI ID:
- 22590674
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 108; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
The Effects of Nitrogen on the Interface State Density Near the Conduction Band Edge in 4H and 6H-SiC
Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing
Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen
Conference
·
Mon Jun 12 00:00:00 EDT 2000
·
OSTI ID:771405
Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing
Journal Article
·
Mon Jun 05 20:00:00 EDT 2023
· Journal of Applied Physics
·
OSTI ID:2424267
Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen
Conference
·
Wed Dec 31 23:00:00 EST 2003
·
OSTI ID:978128