Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy
- IMEC, Kapeldreef 75, B-3001 Heverlee (Belgium)
- Institute of Microelectronics, Peking University, 100871 Beijing (China)
The nanoscale resistive switching in hafnium oxide stack is investigated by the conductive atomic force microscopy (C-AFM). The initial oxide stack is insulating and electrical stress from the C-AFM tip induces nanometric conductive filaments. Multimode resistive switching can be observed in consecutive operation cycles at one spot. The different modes are interpreted in the framework of a low defect quantum point contact theory. The model implies that the optimization of the conductive filament active region is crucial for the future application of nanoscale resistive switching devices.
- OSTI ID:
- 22590612
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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