Unipolar infrared detectors based on InGaAs/InAsSb ternary superlattices
- Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433 (United States)
- Air Force Research Laboratory, Kirtland Air Force Base, New Mexico 87117 (United States)
Growth and characteristics of mid-wave infrared (MWIR) InGaAs/InAsSb strained layer superlattice (SLS) detectors are reported. InGaAs/InAsSb SLSs, identified as ternary SLSs, not only provide an extra degree of freedom for superlattice strain compensation but also show enhanced absorption properties compared to InAs/InAsSb SLSs. Utilizing In{sub 1-y}Ga{sub y}As/InAs{sub 0.65}Sb{sub 0.35} ternary SLSs (y = 0, 5, 10, and 20%) designed to have the same bandgap, a set of four unipolar detectors are investigated. These demonstrate an enhancement in the detector quantum efficiency due to the increased absorption coefficient. The detectors exhibit dark current performance within a factor of 10 of Rule 07 at temperatures above 120 K, and external quantum efficiencies in the 15%–25% range. This work demonstrates ternary SLSs are a potential absorber material for future high performance MWIR detectors.
- OSTI ID:
- 22590561
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 2; Other Information: (c) 2016 U.S. Government; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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