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Title: Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

Abstract

Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

Authors:
;  [1]; ;  [2];  [1];  [3];  [3]; ; ;  [4]
  1. Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China)
  2. Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
  3. (China)
  4. Applied Materials Inc., Sunnyvale, California 94085 (United States)
Publication Date:
OSTI Identifier:
22590489
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 9; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; CHEMICAL VAPOR DEPOSITION; ELECTROLUMINESCENCE; LAYERS; METALS; PHOTOLUMINESCENCE; QUANTUM WELLS; SILICON OXIDES; STRAINS; TUNNEL DIODES; TUNNEL EFFECT; WAVELENGTHS

Citation Formats

Lin, Chung-Yi, Chang, Chih-Chiang, Huang, Chih-Hsiung, Huang, Shih-Hsien, Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw, Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan, National Nano Device Labs, Hsinchu 30077, Taiwan, Huang, Yi-Chiau, Chung, Hua, and Chang, Chorng-Ping. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells. United States: N. p., 2016. Web. doi:10.1063/1.4961939.
Lin, Chung-Yi, Chang, Chih-Chiang, Huang, Chih-Hsiung, Huang, Shih-Hsien, Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw, Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan, National Nano Device Labs, Hsinchu 30077, Taiwan, Huang, Yi-Chiau, Chung, Hua, & Chang, Chorng-Ping. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells. United States. doi:10.1063/1.4961939.
Lin, Chung-Yi, Chang, Chih-Chiang, Huang, Chih-Hsiung, Huang, Shih-Hsien, Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw, Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan, National Nano Device Labs, Hsinchu 30077, Taiwan, Huang, Yi-Chiau, Chung, Hua, and Chang, Chorng-Ping. 2016. "Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells". United States. doi:10.1063/1.4961939.
@article{osti_22590489,
title = {Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells},
author = {Lin, Chung-Yi and Chang, Chih-Chiang and Huang, Chih-Hsiung and Huang, Shih-Hsien and Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw and Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan and National Nano Device Labs, Hsinchu 30077, Taiwan and Huang, Yi-Chiau and Chung, Hua and Chang, Chorng-Ping},
abstractNote = {Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.},
doi = {10.1063/1.4961939},
journal = {Applied Physics Letters},
number = 9,
volume = 109,
place = {United States},
year = 2016,
month = 8
}
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