Spectral dependences of extrinsic optical absorption in sillenite crystals
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- Tomsk State University of Control Systems and Radioelectronics, Tomsk (Russian Federation)
- A.A.Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, Moscow (Russian Federation)
The influence of laser irradiation at wavelengths of 532 and 655 nm and annealing in air at temperatures from 200 to 370 °C on optical absorption spectra of undoped bismuth silicon oxide and bismuth germanium oxide and aluminium-doped bismuth titanium oxide crystals has been studied experimentally. The experimental data have been interpreted in terms of a model for extrinsic absorption that takes into account not only the contribution of the photoexcitation of electrons from deep donor centres with a normal distribution of their concentration with respect to ionisation energy but also that of intracentre transitions. (laser applications and other topics in quantum electronics)
- OSTI ID:
- 22551229
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 7 Vol. 45; ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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