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Title: Field-induced decoupling of NiO-magnetite multilayers

Conference ·
OSTI ID:225306
;  [1]; ; ; ;  [2]
  1. National Inst. of Standards and Technology, Gaithersburg, MD (United States). Reactor Radiation Div.
  2. Florida State Univ., Tallahassee, FL (United States). Dept. of Physics

NiO-magnetite multilayers exhibit long range antiferromagnetic order with the magnetite ferrimagnetic correlations confined to a single layer due to stacking faults of the spinel structure at the interfaces. A systematic study of the field-dependence of the interlayer coupling in a series of NiO-magnetite multilayers has been made using neutron diffraction. Both NiO and magnetite single thin films were included in the measurements for comparison. In the magnetite film, intensity changes with magnetic field are consistent with domain reorientation of the net ferrimagnetic moments, while in the NiO film there are essentially no intensity changes. There is no significant field dependence of the magnetic correlation lengths in either film. For multilayers where the ratio of NiO to magnetite layer thickness is far from unity, the field dependence approximates that of the bulk films. However, for a Fe{sub 3}O{sub 4} (68{angstrom}){vert_bar}NiO (34{angstrom}) multilayer the NiO antiferromagnetic intensity decreases with increasing field, and there is a broadening of the NiO peak on the order of 30%. Concomitantly, the magnetite spins rotate collinear with the field, as expected, due to the net 4.2 {micro}{sub B} moment per unit-cell. The NiO moments appear to rotate into domains where the direction of propagation of the ferromagnetic sheets is closer to the field direction.

OSTI ID:
225306
Report Number(s):
CONF-941144-; ISBN 1-55899-278-2; TRN: IM9621%%236
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: 1995; Related Information: Is Part Of Neutron scattering in materials science 2; Neumann, D.A. [ed.] [National Inst. of Standards and Technology, Gaithersburg, MD (United States)]; Russell, T.P. [ed.] [IBM Almaden Research Center, San Jose, CA (United States)]; Wuensch, B.J. [ed.] [Massachusetts Inst. of Tech., Cambridge, MA (United States)]; PB: 813 p.; Materials Research Society symposium proceedings, Volume 376
Country of Publication:
United States
Language:
English