Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
- Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States)
Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.
- OSTI ID:
- 22494898
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 2; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
BORON NITRIDES
DIFFUSION BARRIERS
EQUIPMENT
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
HEIGHT
INVENTIONS
MATERIALS
PEAKS
PERFORMANCE
QUANTUM WELLS
TRANSITION ELEMENTS
TUNNEL EFFECT
TWO-DIMENSIONAL SYSTEMS