Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

Journal Article · Fri Aug 28 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4929425· OSTI ID:22494804

Wang, Chenggong; Wang, Congcong; Kauppi, John ^[1]; Liu, Xiaoliang ^[2]; Gao, Yongli ^[1]

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1. Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States)
2. Institute for Super-microstructure and Ultrafast Process in Advanced Materials (ISUPAM), Central South University, Changsha, Hunan 410083 (China)

Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.

• OSTI ID: 22494804
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
ELECTRONIC STRUCTURE
FERMI LEVEL
FULLERENES
HOLES
MOLECULAR ORBITAL METHOD
MOLYBDENUM IONS
MOLYBDENUM OXIDES
THIN FILMS
ULTRAVIOLET RADIATION
X RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY