Epitaxial lift-off for solid-state cavity quantum electrodynamics

Journal Article · Fri Aug 21 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4928769· OSTI ID:22494777

Greuter, Lukas; Najer, Daniel; Kuhlmann, Andreas V.; Starosielec, Sebastian; Warburton, Richard J. ^[1]; Valentin, Sascha R.; Ludwig, Arne; Wieck, Andreas D. ^[2]

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1. Department of Physics, University of Basel, Klingelbergstrasse 82, Basel 4056 (Switzerland)
2. Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany)

We demonstrate an approach to incorporate self-assembled quantum dots into a Fabry-Pérot-like microcavity. Thereby, a 3λ/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the semiconductor-mirror interface, demonstrating that the epitaxial lift-off procedure is a promising procedure for cavity quantum electrodynamics in the solid state. As a first step in this direction, we demonstrate a clear cavity-quantum dot interaction in the weak coupling regime with a Purcell factor in the order of 3. Estimations of the coupling strength via the Purcell factor suggest that we are close to the strong coupling regime.

• OSTI ID: 22494777
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIELECTRIC MATERIALS
EPITAXY
FABRY-PEROT INTERFEROMETER
GALLIUM ARSENIDES
QUANTUM DOTS
QUANTUM ELECTRODYNAMICS
SEMICONDUCTOR MATERIALS
STRONG-COUPLING MODEL
VAN DER WAALS FORCES
WEAK-COUPLING MODEL