Deep traps and photo-electric properties of p-Si/MgO/n-Zn{sub 1−x}Mg{sub x}O heterojunction

Journal Article · Fri Aug 21 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4928728· OSTI ID:22494765

Paradowska, K. M.; Gumienny, Z.; Biegański, P. ^[1]; Pietrzyk, M. A.; Kozanecki, A. ^[2]

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1. Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)
2. Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)

In the paper, the photoluminescence (PL) measurements, current–voltage–temperature (I-V-T) measurements, space charge techniques (C-V and deep level transient spectroscopy (DLTS)), and photocurrent spectral characteristics have been applied to investigate defects in p-Si/MgO/ n-Zn{sub 1−x}Mg{sub x}O heterojunction (HJ). The HJ structure was grown on p-type Si (111) substrate with resistivity equal to 0.1 Ω cm by the plasma-assisted molecular beam epitaxy technique. A radio-frequency cell was used for the generation of oxygen plasma. PL spectrum let us determine the Mg content ∼10%. Besides the excitonic Zn{sub 0.9}Mg{sub 0.1}O line, the PL spectrum also contains green and yellow emission bands indicating the presence of defect states in the investigated structures. I-V measurements reveal the rectifying properties of the HJ and the current thermally activated with a trap with the activation energy equal to 0.42 eV. DLTS studies yield the majority trap of the activation energy 0.42 eV, confirming the result obtained from the I-V measurements. It was found that the defects related to this trap have a point like behaviour. A spectral characteristic of the photocurrent shows that the p-Si/MgO/n-Zn{sub 1−x}Mg{sub x}O HJ may be applied as a photodiode operating within the wavelength range of 300 nm-1100 nm. The dark current transport and photocurrent spectrum were explained using the Anderson model of a HJ.

• OSTI ID: 22494765
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ACTIVATION ENERGY
CURRENTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEFECTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EV RANGE
HETEROJUNCTIONS
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
OXYGEN
PHOTOLUMINESCENCE
PLASMA
RADIOWAVE RADIATION
SILICON
SPACE CHARGE
SPECTRA
WAVELENGTHS