Investigation of HCl-based surface treatment for GaN devices

Journal Article · Mon Feb 01 00:00:00 EST 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4941210· OSTI ID:22494584

Okada, Hiroshi ^[1]; Shinohara, Masatohi; Kondo, Yutaka; Sekiguchi, Hiroto; Yamane, Keisuke ^[2]; Wakahara, Akihiro ^[2]

---

1. Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 (Japan)
2. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580 (Japan)

Surface treatments of GaN in HCl-based solutions are studied by X-ray photoelectron spectroscopy (XPS) and electrical characterization of fabricated GaN surfaces. A dilute-HCl treatment (HCl:H{sub 2}O=1:1) at room temperature and a boiled-HCl treatment (undiluted HCl) at 108°C are made on high-temperature annealed n-GaN. From the XPS study, removal of surface oxide by the dilute-HCl treatment was found, and more thoroughly oxide-removal was confirmed in the boiled-HCl treatment. Effect of the surface treatment on electrical characteristics on AlGaN/GaN transistor is also studied by applying treatment processes prior to the surface SiN deposition. Increase of drain current is found in boiled-HCl treated samples. The results suggest that the boiled-HCl treatment is effective for GaN device fabrication.

• OSTI ID: 22494584
• Journal Information: AIP Conference Proceedings, Vol. 1709, Issue 1; Conference: IRAGO conference 2015: 360 degree outlook on critical scientific and technological challenges for a sustainable society, Aichi (Japan), 22-23 Oct 2015; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
DEPOSITION
FABRICATION
GALLIUM NITRIDES
HYDROCHLORIC ACID
MATHEMATICAL SOLUTIONS
OXIDES
SILICON NITRIDES
SURFACE TREATMENTS
SURFACES
TEMPERATURE RANGE 0273-0400 K
TRANSISTORS
X-RAY PHOTOELECTRON SPECTROSCOPY