HfO{sub 2} dielectric thickness dependence of electrical properties in graphene field effect transistors with double conductance minima
- Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084 (China)
- National Center for Nanoscience and Technology, Zhongguancun, Beijing 100190 (China)
- School of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Materials Processing Technology of MOE, Tsinghua University, Beijing 100084 (China)
We investigate the electrical properties in back-gated graphene field effect transistors (GFETs) with SiO{sub 2} dielectric and different thickness of high-k HfO{sub 2} dielectric. The results show that transform characteristic (I{sub ds}–V{sub gs}) curves of GFETs are uniquely W-shaped with two charge neutrality point (left and right) in both SiO{sub 2} and HfO{sub 2} dielectric (SiO{sub 2}-GFETs and HfO{sub 2}-GFETs). The gate voltage reduces drastically in HfO{sub 2}-GFETs compared with that in SiO{sub 2}-GFETs, and it becomes much smaller with the decline of HfO{sub 2} thickness. The left charge neutrality point in I{sub d}–V{sub g} curves of all HfO{sub 2}-GFETs is negative, compared to the positive ones in SiO{sub 2}-GFETs, which means that there exists n-doping in graphene with HfO{sub 2} as bottom dielectric. We speculate that this n-doping comes from the HfO{sub 2} layer, which brings fixed charged impurities in close proximity to graphene. The carrier mobility is also researched, demonstrating a decreasing trend of hole mobility in HfO{sub 2}-GFETs contrast to that in SiO{sub 2}-GFETs. In a series of HfO{sub 2}-GFETs with different HfO{sub 2} dielectric thickness, the hole mobility shows a tendency of rise when the thickness decreases to 7 nm. The possible reason might be due to the introduced impurities into HfO{sub 2} film from atomic layer deposition process, the concentration of which varies from the thickness of HfO{sub 2} layer.
- OSTI ID:
- 22492804
- Journal Information:
- Journal of Applied Physics, Vol. 118, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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