The influence of electron energy quantization in a space-charge region on the accumulation capacitance of InAs metal-oxide-semiconductor capacitors

Journal Article · Mon Sep 28 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4931772· OSTI ID:22492759

Tsarenko, A. V.; Guzev, A. A.; Polovinkin, V. G.; Nastovjak, A. E.; Valisheva, N. A. ^[1]

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1. Rzhanov Institute of Semiconductor Physics, SB RAS, 13 Lavrentiev Ave., Novosibirsk 630090 (Russian Federation)

The influence of electron energy quantization in a space-charge region on the accumulation capacitance of the InAs-based metal-oxide-semiconductor capacitors (MOSCAPs) has been investigated by modeling and comparison with the experimental data from Au/anodic layer(4-20 nm)/n-InAs(111)A MOSCAPs. The accumulation capacitance for MOSCAPs has been calculated by the solution of Poisson equation with different assumptions and the self-consistent solution of Schrödinger and Poisson equations with quantization taken into account. It was shown that the quantization during the MOSCAPs accumulation capacitance calculations should be taken into consideration for the correct interface states density determination by Terman method and the evaluation of gate dielectric thickness from capacitance-voltage measurements.

• OSTI ID: 22492759
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CAPACITANCE
CAPACITORS
DIELECTRIC MATERIALS
INDIUM ARSENIDES
INTERFACES
LAYERS
METALS
OXIDES
POISSON EQUATION
QUANTIZATION
SIMULATION
SPACE CHARGE