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Hole mobility enhancement of MEH-PPV film by heat treatment at T{sub g}

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4939135· OSTI ID:22492229
 [1];  [2];  [1]
  1. Natural Science Center for Basic Research and Development (N-BARD), Hiroshima University, 1-3-1 Kagamiyama, Higashi-hiroshima, Hiroshima 739-8526 (Japan)
  2. Japan Synchrotron Radiation Research Institute, 1-1-1, Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198 (Japan)

The hole mobility of poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) film was measured using the time-of-flight method. The hole mobility was enhanced 4-fold after annealing at around the glass transition temperature (T{sub g}). Optical, atomic force, and Kelvin force microscopies, and grazing-incidence X-ray diffraction measurements indicate the enhancement can be attributed to a homogeneous film structure, a homogeneous Fermi level energy, and a face-on oriented structure, all of which were established by annealing at T{sub g}.

OSTI ID:
22492229
Journal Information:
AIP Advances, Journal Name: AIP Advances Journal Issue: 12 Vol. 5; ISSN AAIDBI; ISSN 2158-3226
Country of Publication:
United States
Language:
English

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