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Title: Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

Abstract

Highlights: • A hybrid device was demonstrated by using MEH-PPV, PEDOT:PSS, and GaN nanoneedles. • I–V curve of the hybrid device showed its rectification behaviour, similar to a diode. • EL peak originated by the different potential barriers at MEH-PPV and GaN interface. - Abstract: A hybrid device that combines the properties of organic and inorganic semiconductors was fabricated and studied. It incorporated poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic polymers and GaN nanoneedles as an inorganic semiconductor. Layers of the two polymers were spin coated on to the GaN nanoneedles. The one peak in the electroluminescence spectrum originated from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles. However, the photoluminescence spectrum showed peaks due to both GaN nanoneedles and MEH-PPV. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices.

Authors:
; ; ;  [1];  [2];  [1];  [3];  [1];  [3];  [4]
  1. Department of Applied Science, Korea Maritime and Ocean University, Busan 606-791 (Korea, Republic of)
  2. Department of Nano-semiconductor Engineering, Korea Maritime and Ocean University, Busan 606-791 (Korea, Republic of)
  3. (Korea, Republic of)
  4. Division of Convergence Technology, Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22475860
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 68; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; EFFICIENCY; ELECTROLUMINESCENCE; GALLIUM NITRIDES; INTERFACES; LAYERS; NANOSTRUCTURES; ORGANIC POLYMERS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SPECTRA

Citation Formats

Shin, Min Jeong, Gwon, Dong-Oh, Lee, Chan-Mi, Lee, Gang Seok, Jeon, In-Jun, Ahn, Hyung Soo, Department of Nano-semiconductor Engineering, Korea Maritime and Ocean University, Busan 606-791, Yi, Sam Nyung, E-mail: snyi@kmou.ac.kr, Department of Nano-semiconductor Engineering, Korea Maritime and Ocean University, Busan 606-791, and Ha, Dong Han. Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer. United States: N. p., 2015. Web. doi:10.1016/J.MATERRESBULL.2015.03.057.
Shin, Min Jeong, Gwon, Dong-Oh, Lee, Chan-Mi, Lee, Gang Seok, Jeon, In-Jun, Ahn, Hyung Soo, Department of Nano-semiconductor Engineering, Korea Maritime and Ocean University, Busan 606-791, Yi, Sam Nyung, E-mail: snyi@kmou.ac.kr, Department of Nano-semiconductor Engineering, Korea Maritime and Ocean University, Busan 606-791, & Ha, Dong Han. Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer. United States. doi:10.1016/J.MATERRESBULL.2015.03.057.
Shin, Min Jeong, Gwon, Dong-Oh, Lee, Chan-Mi, Lee, Gang Seok, Jeon, In-Jun, Ahn, Hyung Soo, Department of Nano-semiconductor Engineering, Korea Maritime and Ocean University, Busan 606-791, Yi, Sam Nyung, E-mail: snyi@kmou.ac.kr, Department of Nano-semiconductor Engineering, Korea Maritime and Ocean University, Busan 606-791, and Ha, Dong Han. 2015. "Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer". United States. doi:10.1016/J.MATERRESBULL.2015.03.057.
@article{osti_22475860,
title = {Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer},
author = {Shin, Min Jeong and Gwon, Dong-Oh and Lee, Chan-Mi and Lee, Gang Seok and Jeon, In-Jun and Ahn, Hyung Soo and Department of Nano-semiconductor Engineering, Korea Maritime and Ocean University, Busan 606-791 and Yi, Sam Nyung, E-mail: snyi@kmou.ac.kr and Department of Nano-semiconductor Engineering, Korea Maritime and Ocean University, Busan 606-791 and Ha, Dong Han},
abstractNote = {Highlights: • A hybrid device was demonstrated by using MEH-PPV, PEDOT:PSS, and GaN nanoneedles. • I–V curve of the hybrid device showed its rectification behaviour, similar to a diode. • EL peak originated by the different potential barriers at MEH-PPV and GaN interface. - Abstract: A hybrid device that combines the properties of organic and inorganic semiconductors was fabricated and studied. It incorporated poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic polymers and GaN nanoneedles as an inorganic semiconductor. Layers of the two polymers were spin coated on to the GaN nanoneedles. The one peak in the electroluminescence spectrum originated from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles. However, the photoluminescence spectrum showed peaks due to both GaN nanoneedles and MEH-PPV. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices.},
doi = {10.1016/J.MATERRESBULL.2015.03.057},
journal = {Materials Research Bulletin},
number = ,
volume = 68,
place = {United States},
year = 2015,
month = 8
}
  • Conductive polymers are of particular interest for thermoelectric applications due to their low thermal conductivity and relatively high electrical conductivity. In this study, commercially available conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) was used in a hybrid metal/polymer/metal thin film design in order to achieve a high Seebeck coefficient with the value of 252lV/k on a relatively low temperature scale. Polymer film thickness was varied in order to investigate its influence on the Seebeck effect. The high Seebeck coefficient indicates that the metal/polymer/metal design can develop a large entropy difference in internal energy of charge carriers between high and low-temperature metal electrodes to developmore » electrical potential due to charge transport in conducting polymer film through metal/polymer interface. Therefore, the metal/polymer/metal structure presents a new design to combine inorganic metals and organic polymers in thin-film form to develop Seebeck devices« less
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  • The quenching of excitons at the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) anode in blue polyalkoxyspirobifluorene-arylamine polymer light-emitting diodes is investigated. Due to the combination of a higher electron mobility and the presence of electron traps, the recombination zone shifts from the cathode to the anode with increasing voltage. The exciton quenching at the anode at higher voltages leads to an efficiency roll-off. The voltage dependence of the luminous efficiency is reproduced by a drift-diffusion model under the condition that quenching of excitons at the PEDOT:PSS anode and metallic cathode is of equal strength. Experimentally, the efficiency roll-off at high voltages due tomore » anode quenching is eliminated by the use of an electron-blocking layer between the anode and the light-emitting polymer.« less
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