Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

Journal Article · Sat Aug 15 04:00:00 EDT 2015 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2015.03.057· OSTI ID:22475860

Shin, Min Jeong; Gwon, Dong-Oh; Lee, Chan-Mi; Lee, Gang Seok ^[1]; Jeon, In-Jun ^[2]; Ahn, Hyung Soo ^[1]; Ha, Dong Han ^[3]

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1. Department of Applied Science, Korea Maritime and Ocean University, Busan 606-791 (Korea, Republic of)
2. Department of Nano-semiconductor Engineering, Korea Maritime and Ocean University, Busan 606-791 (Korea, Republic of)
3. Division of Convergence Technology, Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of)

Highlights: • A hybrid device was demonstrated by using MEH-PPV, PEDOT:PSS, and GaN nanoneedles. • I–V curve of the hybrid device showed its rectification behaviour, similar to a diode. • EL peak originated by the different potential barriers at MEH-PPV and GaN interface. - Abstract: A hybrid device that combines the properties of organic and inorganic semiconductors was fabricated and studied. It incorporated poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic polymers and GaN nanoneedles as an inorganic semiconductor. Layers of the two polymers were spin coated on to the GaN nanoneedles. The one peak in the electroluminescence spectrum originated from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles. However, the photoluminescence spectrum showed peaks due to both GaN nanoneedles and MEH-PPV. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices.

• OSTI ID: 22475860
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Vol. 68; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
EFFICIENCY
ELECTROLUMINESCENCE
GALLIUM NITRIDES
INTERFACES
LAYERS
NANOSTRUCTURES
ORGANIC POLYMERS
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SPECTRA