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Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4934931· OSTI ID:22492140
; ; ; ; ; ;  [1]
  1. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024 China (China)
The experimental tests of dose rate and annealing effects on array charge-coupled devices (CCDs) are presented. The saturation output voltage (V{sub S}) versus the total dose at the dose rates of 0.01, 0.1, 1.0, 10.0 and 50 rad(Si)/s are compared. Annealing tests are performed to eliminate the time-dependent effects. The V{sub S} degradation levels depend on the dose rates. The V{sub S} degradation mechanism induced by dose rate and annealing effects is analyzed. The V{sub S} at 20 krad(Si) with the dose rate of 0.03 rad(Si)/s are supplemented to assure the degradation curves between the dose rates of 0.1 and 0.01 rad(Si)/s. The CCDs are divided into two groups, with one group biased and the other unbiased during {sup 60}Co γ radiation. The V{sub S} degradation levels of the biased CCDs during radiation are more severe than that of the unbiased CCDs.
OSTI ID:
22492140
Journal Information:
AIP Advances, Journal Name: AIP Advances Journal Issue: 10 Vol. 5; ISSN AAIDBI; ISSN 2158-3226
Country of Publication:
United States
Language:
English

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