Growth and characterization of In{sub X}Ga{sub 1-X}N/GaN single quantum well prepared by MOCVD

Journal Article · Wed Jun 24 04:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4918131· OSTI ID:22490540

Prabakaran, K.; Ramesh, R.; Jayasakthi, M.; Loganathan, R.; Arivazhagan, P.

The InGaN/GaN SQW structures were grown on c-plane sapphire substrate using metal-organic chemical vapor deposition (MOCVD). The thickness and indium composition of the InGaN was determined by HRXRD. From simulation fit the composition of indium was found to be 10% and thickness was around 5nm and 10nm. The Photoluminescence emission was found to be shifited towards lower wavelength as 479nm, 440nm on increasing the thickness. The photoluminescence intensity was degrades with increases of InGaN thickness. Atomic force microscopy studies were also carried out and the results are discussed in detail.

• OSTI ID: 22490540
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1665; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
EMISSION SPECTRA
EMISSION SPECTROSCOPY
GALLIUM NITRIDES
INDIUM COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM WELLS
SAPPHIRE
SUBSTRATES
THICKNESS
WAVELENGTHS