Temperature dependent barrier height and ideality factor of electrodeposited n-CdSe/Cu Schottky barrier diode
- Department of Applied Physics, Indian School of Mines, Dhanbad - 826004, Jharkhand (India)
This article reports the measurement of temperature-dependent barrier height and ideality factor of n-CdSe/Cu Schottky barrier diode. The Cadmium Selenide (CdSe) thin films have been deposited by simple electrodeposition technique. The XRD measurements ravels the deposited single phase CdSe films are highly oriented on (002) plane and the average particle size has been calculated to be ~18 nm. From SEM characterization, it is clear that the surface of CdSe thin films are continuous, homogeneous and the film is well adhered to the substrate and consists of fine grains which are irregular in shape and size. Current-Voltage characteristics have been measured at different temperatures in the range (298 K – 353 K). The barrier height and ideality factor are found to be strongly temperature dependent. The inhomogenious barrier height increases and ideality factor decreases with increase in temperature. The expectation value has been calculated and its value is 0.30 eV.
- OSTI ID:
- 22490533
- Journal Information:
- AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation of significantly high barrier height in Cu/GaN Schottky diode
High Schottky barrier height of the Al/{ital n}-GaAs diodes achieved by sputter deposition
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CADMIUM SELENIDES
COPPER
ELECTRIC CONDUCTIVITY
ELECTRODEPOSITION
EV RANGE
EXPECTATION VALUE
N-TYPE CONDUCTORS
PARTICLE SIZE
SCANNING ELECTRON MICROSCOPY
SCHOTTKY BARRIER DIODES
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
THIN FILMS
X-RAY DIFFRACTION