Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device

Journal Article · Mon Feb 08 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4941760· OSTI ID:22489437

Zheng, B.; Croxall, A. F.; Sfigakis, F.; Farrer, I.; Beere, H. E.; Ritchie, D. A. ^[1]; Das Gupta, K. ^[1]

---

1. Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, with an insulating barrier of only 10 nm between the two quantum wells. Coulomb drag resistivity is a direct measure of the strength of interlayer particle-particle interactions. We explore the strongly interacting regime of low carrier densities (2D interaction parameter r{sub s} up to 14). Our ambipolar device design allows a comparison between the effects of the attractive electron-hole and repulsive hole-hole interactions and also shows the effects of the different effective masses of electrons and holes in GaAs.

• OSTI ID: 22489437
• Journal Information: Applied Physics Letters, Vol. 108, Issue 6; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
CARRIER DENSITY
DESIGN
GALLIUM ARSENIDES
HOLES
LAYERS
QUANTUM WELLS