Undoped electron-hole bilayers in a GaAs/AlGaAs double quantum well

Journal Article · Mon Jan 29 04:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2437664· OSTI ID:20971802

Seamons, J A; Tibbetts, D R; Reno, J L; Lilly, M P ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

The authors present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have independently tunable densities of the two-dimensional electron gas and two-dimensional hole gas. The authors report four-terminal transport measurements of the independently contacted electron and hole layers with balanced densities from 1.2x10{sup 11} cm{sup -2} down to 4x10{sup 10} cm{sup -2} at T=300 mK. The mobilities can exceed 1x10{sup 6} cm{sup 2} V{sup -1} s{sup -1} for electrons and 4x10{sup 5} cm{sup 2} V{sup -1} s{sup -1} for holes.

• OSTI ID: 20971802
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 90; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
ELECTRON DENSITY
ELECTRON GAS
ELECTRONS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
HOLE MOBILITY
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS