Low temperature formation of higher-k cubic phase HfO{sub 2} by atomic layer deposition on GeO{sub x}/Ge structures fabricated by in-situ thermal oxidation

Journal Article · Mon Feb 01 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4941538· OSTI ID:22489411

Huang, P. -C.; Taoka, N.; Yokoyama, M.; Takenaka, M.; Takagi, S. ^[1]

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1. School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

We have demonstrated a low temperature formation (300 °C) of higher-k HfO{sub 2} using atomic layer deposition (ALD) on an in-situ thermal oxidation GeO{sub x} interfacial layer. It is found that the cubic phase is dominant in the HfO{sub 2} film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO{sub 2} film on a 1-nm-thick GeO{sub x} form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO{sub 2} can be induced by the formation of six-fold crystalline GeO{sub x} structures in the underlying GeO{sub x} interfacial layer.

• OSTI ID: 22489411
• Journal Information: Applied Physics Letters, Vol. 108, Issue 5; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTALLIZATION
EPITAXY
FILMS
HAFNIUM OXIDES
LAYERS
OXIDATION
PERMITTIVITY
TEMPERATURE RANGE 0400-1000 K