In Situ Characterization of Ferroelectric HfO2 During Rapid Thermal Annealing

Narasimhan, Vijay Kris; McBriarty, Martin E.; Passarello, Donata; Adinolfi, Valerio; Toney, Michael F.; Mehta, Apurva; Littau, Karl A.

doi:10.1002/pssr.202000598

Title: In Situ Characterization of Ferroelectric HfO₂ During Rapid Thermal Annealing

Journal Article · Mon Feb 08 00:00:00 EST 2021 · Physica Status Solidi rrl

DOI:https://doi.org/10.1002/pssr.202000598· OSTI ID:1777416

^[1]; McBriarty, Martin E. ^[1]; Passarello, Donata ^[2]; Adinolfi, Valerio ^[1]; Toney, Michael F. ^[3]; Mehta, Apurva ^[2]; Littau, Karl A. ^[1]

EMD Performance Materials, San Jose, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
Univ. of Colorado, Boulder, CO (United States)

Thermal annealing is critical in governing the phase distribution, and ultimately the electrical properties, of ferroelectric hafnium oxide films. In particular, rapid thermal annealing (RTA) has been shown to favor the formation of ferroelectric crystal phases, but the dynamic behavior of the film over the course of the anneal is not well understood. Herein, synchrotron X-ray diffraction is used to characterize the phase distribution of HfO₂ films deposited by atomic layer deposition (ALD) in situ during RTA, revealing complex phase transformations occurring on the scale of seconds. All samples investigated here transform into a nonmonoclinic phase, which is required for ferroelectric films. However, this phase often converts into the more stable monoclinic phase as annealing proceeds. The kinetic barrier to the transformation to the monoclinic phase during heating is higher than 1 eV f.u.^-1 In this work, the initial crystallization into the ferroelectric phase and relatively high barrier to transformation to the nonferroelectric phase suggests that careful control of the thermal annealing profile can greatly increase the ferroelectric fraction of the film. By using a fast ramp rate and a short annealing time above the ferroelectric crystallization temperature, the remanent polarization of a pure HfO₂ film can be increased more than twofold.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1777416

Journal Information:: Physica Status Solidi rrl, Vol. 15, Issue 5; ISSN 1862-6254

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
ferroelectrics
hafnium oxide
phase transformation
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Title: In Situ Characterization of Ferroelectric HfO2 During Rapid Thermal Annealing

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