AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

Journal Article · Mon Jan 04 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4939508· OSTI ID:22489263

Sun, Shichuang ^[1]; Fu, Kai; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun ^[2]; Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing ^[1]

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1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)
2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China)

This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

• OSTI ID: 22489263
• Journal Information: Applied Physics Letters, Vol. 108, Issue 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM IONS
BREAKDOWN
BUFFERS
CHEMICAL VAPOR DEPOSITION
DOSES
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM NITRIDES
KEV RANGE
LEAKAGE CURRENT
METALS
PERFORMANCE
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TRANSISTORS