Capping of rare earth silicide nanowires on Si(001)

Journal Article · Mon Jan 04 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4939693· OSTI ID:22489258

Appelfeller, Stephan; Franz, Martin; Kubicki, Milan; Dähne, Mario ^[1]; Reiß, Paul; Niermann, Tore; Lehmann, Michael ^[2]; Schubert, Markus Andreas ^[3]

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1. Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin (Germany)
2. Institut für Optik und Atomare Physik, Technische Universität Berlin, 10623 Berlin (Germany)
3. IHP–Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder) (Germany)

The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along (111) lattice planes. This behavior is related to strain due to the lattice mismatch between the Si overlayer and the nanowires.

• OSTI ID: 22489258
• Journal Information: Applied Physics Letters, Vol. 108, Issue 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
FILMS
LAYERS
NANOWIRES
RARE EARTHS
RECRYSTALLIZATION
RESOLUTION
SCANNING TUNNELING MICROSCOPY
SILICIDES
STACKING FAULTS
STRAINS
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY