Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors
- Research Center for Nano Device and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)
- Department of Frontier Materials, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)
Transfer-free graphene synthesis was performed on sapphire substrates by using the catalyst metal agglomeration technique, and the graphene film quality was compared to that synthesized on sputtered SiO{sub 2}/Si substrates. Raman scattering measurements indicated that the graphene film on sapphire has better structural qualities than that on sputtered SiO{sub 2}/Si substrates. The cross-sectional transmission microscopic study also revealed that the film flatness was drastically improved by using sapphire substrates instead of sputtered SiO{sub 2}/Si substrates. These quality improvements seemed to be due the chemical and thermal stabilities of sapphire. Top-gate field-effect transistors were fabricated using the graphene films on sapphire, and it was confirmed that their drain current can be modulated with applied gate voltages. The maximum field-effect mobilities were estimated to be 720 cm{sup 2}/V s for electrons and 880 cm{sup 2}/V s for holes, respectively.
- OSTI ID:
- 22489124
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 107; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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