Direct determination of the electron effective mass of GaAsN by terahertz cyclotron resonance spectroscopy

Journal Article · Mon Aug 10 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4928623· OSTI ID:22489085

Eßer, F.; Helm, M. ^[1]; Drachenko, O.; Winnerl, S.; Patanè, A. ^[2]; Ozerov, M. ^[3]

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1. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany)
2. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
3. Helmholtz-Zentrum Dresden-Rossendorf, Dresden High Magnetic Field Laboratory, Bautzner Landstraße 400, 01328 Dresden (Germany)

We use cyclotron resonance THz-spectroscopy in pulsed magnetic fields up to 63 T to measure the electron effective mass in Si-doped GaAsN semiconductor alloys with nitrogen content up to 0.2%. This technique directly probes the transport properties of the N-modified conduction band, particularly the electron effective mass, which has been discussed controversially in the experimental and theoretical literature. We report a slight increase of the electron effective mass and nonparabolicity with N-content for different photon energies in agreement with the two-level band anticrossing model calculations. Furthermore, we show a pronounced electron mobility drop with increasing N-content.

• OSTI ID: 22489085
• Journal Information: Applied Physics Letters, Vol. 107, Issue 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
CYCLOTRON RESONANCE
DOPED MATERIALS
EFFECTIVE MASS
ELECTRON MOBILITY
ELECTRONS
MAGNETIC FIELDS
NITROGEN
PHOTONS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY