Comparison of Dominant Electron Trap Levels in n-Type and p-Type GaAsN Using Deep-Level Transient Spectroscopy
Conference
·
OSTI ID:882597
Higher-efficiency solar cells improve the likelihood that concentrator photovoltaic systems will become cost effective. A four-junction GaAs- and Ge-based solar cell incorporating a 1-eV bandgap material has an ideal AM0 efficiency of ~40% and could also be used in a terrestrial concentrator module. The dilute-N GaAsN alloy's bandgap can be reduced to near 1 eV when the nitrogen content is 2% - 3%. Indium can also be added to the alloy to improve lattice matching to GaAs and Ge. We have used deep-level transient spectroscopy (DLTS) to characterize traps in both p-type and n-type GaAsN. For each type of material, the dominant DLTS signal corresponds to an electron trap having an activation energy of about 0.35 eV for p-type GaAsN and about 0.45 eV for n-type GaAsN. In both types of materials, the trap concentrations, modified by ..lambda..-effect factors, increase with both increasing N content and increased doping.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 882597
- Report Number(s):
- NREL/CP-520-38916
- Country of Publication:
- United States
- Language:
- English
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