Hydrogen concentration and electric field dependent on electronic properties of germanene

Journal Article · Wed Sep 30 04:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4930733· OSTI ID:22488941

Syaputra, M.; Wungu, T. D. K.; Purqon, A.; Suprijadi, ^[1]

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1. Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10 Bandung, 40132 Indonesia (Indonesia)

Electronic properties of the pristine/hydrogenated germanene are investigated by means of first principles calculations. Our calculation shows interesting results where the electronic properties of the hydrogenated germanene exhibit semiconductor with a direct band gap. It is interesting because pristine germanene (germanium analogue to graphene) has semi-metal properties with zero band gap. We also obtained that the band gap of hydrogenated germanene was influenced by the hydrogen (H) concentration, it is decreasing non-linearly as the H concentration decreased. As 100 percent concentration of H applied on top and bottom layer of germanene, the band gap is 1.41 eV. The pairing of the p{sub z}-orbital of Ge with the s-orbital of H gave contribution to the band gap of hydrogenated germanene. External electrical field is also can be applied to open the band gap. The band gap increasing linearly when the external electrical field increased on pristine germanene. The external electrical field no longer effect the band gap when it applied to the hydrogenated germanene.

• OSTI ID: 22488941
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1677; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABUNDANCE
CONCENTRATION RATIO
ELECTRIC FIELDS
ENERGY GAP
EV RANGE
GERMANENE
GRAPHENE
HYDROGEN
HYDROGENATION
LAYERS
NONLINEAR PROBLEMS
SEMICONDUCTOR MATERIALS