Intrinsic magnetism and spontaneous band gap opening in bilayer silicene and germanene

Wang, Xinquan; Wu, Zhigang

doi:10.1039/c6cp07184h

Intrinsic magnetism and spontaneous band gap opening in bilayer silicene and germanene

Journal Article · Sat Dec 31 23:00:00 EST 2016 · Physical Chemistry Chemical Physics

DOI:https://doi.org/10.1039/c6cp07184h· OSTI ID:1491010

Wang, Xinquan ^[1]; ^[1]

Colorado School of Mines, Golden, CO (United States). Dept. of Physics

It has been long sought to create magnetism out of simple non-magnetic materials, such as silicon and germanium. Here we show that intrinsic magnetism exists in bilayer silicene and germanene with no need to cut, etch, or dope. Unlike bilayer graphene, strong covalent interlayer bonding formed in bilayer silicene and germanene breaks the original π-bonding network of each layer, leaving the unbonded electrons unpaired and localized to carry magnetic moments. These magnetic moments then couple ferromagnetically within each layer while antiferromagnetically across two layers, giving rise to an infinite magnetic sheet with structural integrity and magnetic homogeneity. Furthermore, this unique magnetic ordering results in fundamental band gaps of 0.55 eV and 0.32 eV for bilayer silicene and germanene, respectively. The integration of intrinsic magnetism and spontaneous band gap opening makes bilayer silicene and germanene attractive for future nanoelectronics as well as spin-based computation and data storage.

Research Organization:: Lawrence Berkeley National Laboratory-National Energy Research Scientific Computing Center

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

DOE Contract Number:: SC0006433

OSTI ID:: 1491010

Journal Information:: Physical Chemistry Chemical Physics, Journal Name: Physical Chemistry Chemical Physics Journal Issue: 3 Vol. 19; ISSN 1463-9076; ISSN PPCPFQ

Country of Publication:: United States

Language:: English

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