skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Room temperature analysis of dielectric function of ZnO-based thin film on fused quartz substrate

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4930706· OSTI ID:22488924
; ;  [1]; ;  [1]
  1. Department of Physics, Institut Teknologi Bandung, Ganesa 10 Bandung 40132 (Indonesia)

A set of sample consist of pure ZnO and Cu-doped ZnO film were grown on fused-quartz substrates using pulsed laser deposition (PLD) technique. Here, we report room temperature spectroscopic ellipsometry analysis (covering energy range of 0.5 to 6.3 eV) of pure ZnO film and Cu doped ZnO film at 8 in at. %. The thickness of pure ZnO and Cu-doped ZnO film using in this study is about 350 nm. To extract the dielectric function of ZnO thin film, multilayer modeling is performed which takes into account reflections at each interface through Fresnel coefficients. This method based on Drude-Lorentz models that connect with Kramers-Kronig relations. The best fitting of Ψ (amplitude ratio) and Δ (phase difference) taken by SE measurement are obtained reasonably well by mean the universal fitting of three different photon incident angles. The imaginary part of dielectric function (ε{sub 2}) show the broad peak at around 3.3 eV assigned as combination of optical band energy edge with excitonic states. The exitonic states could not be observed clearly in this stage. The evolution of extracted dielectric function is observable by introducing 8% Cu as indicated by decreasing of excitonic intensity. This result indicates the screening of excitonic state. This study will bring us to have a good undestanding for the role of Cu impurities for ZnO thin films.

OSTI ID:
22488924
Journal Information:
AIP Conference Proceedings, Vol. 1677, Issue 1; Conference: 5. international conference on mathematics and natural sciences, Bandung (Indonesia), 2-3 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English