Ultraviolet to far-infrared dielectric function of n -doped cadmium oxide thin films

Nolen, J. Ryan; Runnerstrom, Evan L.; Kelley, Kyle P.; Luk, Ting S.; Folland, Thomas G.; Cleri, Angela; Maria, Jon-Paul; Caldwell, Joshua D.

doi:10.1103/physrevmaterials.4.025202

Title: Ultraviolet to far-infrared dielectric function of n -doped cadmium oxide thin films

Journal Article · Fri Feb 28 00:00:00 EST 2020 · Physical Review Materials

DOI:https://doi.org/10.1103/physrevmaterials.4.025202· OSTI ID:1770365

^[1];

^[2]; Kelley, Kyle P. ^[3]; Luk, Ting S. ^[4];

^[1]; Cleri, Angela ^[5]; Maria, Jon-Paul ^[5];

^[1]

Vanderbilt Univ., Nashville, TN (United States)
North Carolina State Univ., Raleigh, NC (United States); Army Research Office, Research Triangle Park, NC (United States). CDCC US Army Research Lab.
North Carolina State Univ., Raleigh, NC (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Pennsylvania State Univ., University Park, PA (United States)

Spectroscopic ellipsometry and Fourier transform infrared spectroscopy were applied to extract the ultraviolet to far-infrared (150 – 33333 cm^-1) complex dielectric functions of high-quality, sputtered indium-doped cadmium oxide (In:CdO) thin crystalline films on MgO substrates possessing carrier densities (N_d) ranging from 1.1 x 10¹⁹ cm^-1 to 4.1 x 10²⁰ cm^-1. A multiple oscillator fit model was used to identify and analyze the three major contributors to the dielectric function and their dependence on doping density: interband transitions in the visible, free-carrier excitations (Drude response) in the near- to far-infrared, and IR-active optic phonons in the far-infrared. More specifically, values pertinent to the complex dielectric function such as the optical band gap (E_g), are shown here to be dependent upon carrier density, increasing from approximately 2.5–3 eV, while the high-frequency permittivity (ε_∞) decreases from 5.6 to 5.1 with increasing carrier density. The plasma frequency (ω_p) scales as $$\sqrt{N_d}$$, resulting in ω_p values occurring within the mid- to near-IR, and the effective mass (m *) was also observed to exhibit doping density-dependent changes, reaching a minimum of 0.11 m_o in unintentionally doped films (1.1 x 10¹⁹ cm^-1). Good quantitative agreement with prior work on polycrystalline, higher-doped CdO films is also demonstrated, illustrating the generality of the results. The analysis presented here in this paper will aid in predictive calculations for CdO-based next-generation nanophotonic and optoelectronic devices, while also providing an underlying physical description of the key properties dictating the dielectric response in this atypical semiconductor system.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1770365

Alternate ID(s):: OSTI ID: 1602354

Report Number(s):: SAND-2021-2471J; 694448; TRN: US2206821

Journal Information:: Physical Review Materials, Vol. 4, Issue 2; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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