Effect of Sn doping on nonlinear optical properties of quaternary Se-Sn-(Bi,Te) chalcogenide thin films
- Department of Applied Sciences, ITM University, HUDA Sector 23-A Gurgaon, Haryana (122017) India (India)
The aim of this work is to report the effect of Sn doping on the third order nonlinear optical properties of chalcogenide Se{sub 84-x}Te{sub 15}Bi{sub 1.0}Sn{sub x} thin films. Melt quenching technique has been used for the preparation of bulk chalcogenide glasses. Thin films of the studied composition are deposited on cleaned glass substrate by thermal evaporation technique. Optical band gap (E{sub g}) is calculated by using Tauc extrapolation method and is found to increase from 1.27 eV to 1.64 eV with the incorporation of Sn content. Stryland approach is utilized for the calculation of two photon absorption coefficient (β{sub 2}). The nonlinear refractive index (n{sub 2}) and third order susceptibility (χ{sup (3}) are calculated using Tichy and Ticha approach. The result shows that nonlinear refractive index (n{sub 2}) follows the same trend as that of linear refractive index (n). The values of n{sub 2} of studied composition as compared to pure silica are 1000-5000 times higher.
- OSTI ID:
- 22488851
- Journal Information:
- AIP Conference Proceedings, Vol. 1675, Issue 1; Conference: AMRP-2015: 4. national conference on advanced materials and radiation physics, Longowal (India), 13-14 Mar 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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