Donor-acceptor pair recombination luminescence from monoclinic Cu{sub 2}SnS{sub 3} thin film
- Department of Electrical, Electronics and Information Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940–2188 (Japan)
- National Institute of Technology, Nagaoka College, 888 Nishikatakai, Nagaoka, Niigata 940–8532 (Japan)
The defect levels in Cu{sub 2}SnS{sub 3} (CTS) were investigated using photoluminescence (PL) spectroscopy. A CTS thin film was prepared on a soda-lime glass/molybdenum substrate by thermal co-evaporation and sulfurization. The crystal structure was determined to be monoclinic, and the compositional ratios of Cu/Sn and S/Metal were determined to be 1.8 and 1.2, respectively. The photon energy of the PL spectra observed from the CTS thin film was lower than that previously reported. All fitted PL peaks were associated with defect related luminescence. The PL peaks observed at 0.843 and 0.867 eV were assigned to donor-acceptor pair recombination luminescence, the thermal activation energies of which were determined to be 22.9 and 24.8 meV, respectively.
- OSTI ID:
- 22486336
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Temperature and Excitation Dependence of Recombination in CIGS Thin Films with High Spatial Resolution
Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO{sub 2} laser annealing