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Title: Temperature and Excitation Dependence of Recombination in CIGS Thin Films with High Spatial Resolution

Conference ·
DOI:https://doi.org/10.1117/12.2508802· OSTI ID:1525761
 [1];  [1];  [2];  [2];  [2];  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
  2. National Institute of Advanced Industrial Science and Technology
+ Show Author Affiliations

Alkali post-deposition treatments significantly improve the performance of CuInGaSe2 (CIGS) devices, but there is still room for improvement. Here, we investigate the effects of potassium fluoride alkali post-deposition treatment on the defect chemistry and recombination at grain boundaries and grain interiors using temperature- and injection-dependent cathodoluminescence (CL) spectrum imaging. We study CIGS thin films grown on alkali-free sapphire substrates to isolate the effects of alkali treatment from alkali metals that can diffuse from standard soda-lime glass substrates. We find that alkali treatment affects the energy and temperature dependence of the luminescence peaks, as well as the defect activation energies. CL spectrum images reveal that the luminescence transitions at grain boundaries have a distinct power dependence after alkali treatment and substantially different defect chemistry. This work shows that temperatureand injection-dependence CL spectrum images can provide unique insight into the defect chemistry and recombination behavior of CIGS thin films.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1525761
Report Number(s):
NREL/CP-5K00-73033
Resource Relation:
Conference: Presented at SPIE OPTO, 2-7 February 2019, San Francisco, California
Country of Publication:
United States
Language:
English

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Comparative study of the luminescence and intrinsic point defects in the kesterite Cu 2 ZnSnS 4 and chalcopyrite Cu(In,Ga)Se 2 thin films used in photovoltaic applications journal October 2011
Spatially Resolved Recombination Analysis of CuIn x Ga 1-x Se 2 Absorbers With Alkali Postdeposition Treatments journal November 2018
Growth and photoluminescence of GaSb and Ga 1 − x In x As y Sb 1 − y grown on GaSb substrates by liquid-phase electroepitaxy journal January 1993
Excitation-power dependence of the near-band-edge photoluminescence of semiconductors journal April 1992
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Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
cathodoluminescence
CIGS
recombination
excitation dependence
temperature dependence