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Gate tuneable beamsplitter in ballistic graphene

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4938073· OSTI ID:22486265
; ;  [1]; ;  [2]
  1. Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)
  2. Institut für Theoretische Physik, Universität Regensburg, D-93040 Regensburg (Germany)

We present a beam splitter in a suspended, ballistic, multiterminal, bilayer graphene device. By using local bottomgates, a p-n interface tilted with respect to the current direction can be formed. We show that the p-n interface acts as a semi-transparent mirror in the bipolar regime and that the reflectance and transmittance of the p-n interface can be tuned by the gate voltages. Moreover, by studying the conductance features appearing in magnetic field, we demonstrate that the position of the p-n interface can be moved by 1 μm. The herein presented beamsplitter device can form the basis of electron-optic interferometers in graphene.

OSTI ID:
22486265
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 107; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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