Suppression of low-frequency charge noise in gates-defined GaAs quantum dots

Journal Article · Mon Dec 07 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4937271· OSTI ID:22486203

You, Jie; Li, Hai-Ou; Wang, Ke; Cao, Gang; Song, Xiang-Xiang; Xiao, Ming; Guo, Guo-Ping ^[1]

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1. Key Laboratory of Quantum Information, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026 (China)

To reduce the charge noise of a modulation-doped GaAs/AlGaAs quantum dot, we have fabricated shallow-etched GaAs/AlGaAs quantum dots using the wet-etching method to study the effects of two-dimensional electron gas (2DEG) underneath the metallic gates. The low-frequency 1/f noise in the Coulomb blockade region of the shallow-etched quantum dot is compared with a non-etched quantum dot on the same wafer. The average values of the gate noise are approximately 0.5 μeV in the shallow-etched quantum dot and 3 μeV in the regular quantum dot. Our results show the quantum dot low-frequency charge noise can be suppressed by the removal of the 2DEG underneath the metallic gates, which provides an architecture for noise reduction.

• OSTI ID: 22486203
• Journal Information: Applied Physics Letters, Vol. 107, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
DOPED MATERIALS
GALLIUM ARSENIDES
MODULATION
NOISE
QUANTUM DOTS
TWO-DIMENSIONAL SYSTEMS