Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology

Journal Article · Mon Nov 02 04:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4934841· OSTI ID:22486009

Llorens, J. M.; Wewior, L.; Cardozo de Oliveira, E. R.; Ulloa, J. M.; Utrilla, A. D.; Guzmán, A.; Hierro, A. ^[1]

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1. Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.

• OSTI ID: 22486009
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 107; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DIPOLE MOMENTS
ELECTRONS
GEOMETRY
HOLES
INDIUM ARSENIDES
L-S COUPLING
QUANTUM DOTS
SPIN
TOPOLOGY
WAVE FUNCTIONS