Observation of Band Alignment Transition in InAs/GaAsSb Quantum Dots by Photoluminescence

Ban, Keun-Yong; Kuciauskas, Darius; Bremner, Stephen P.; Honsberg, Christiana B.

doi:10.1063/1.4717766

Title: Observation of Band Alignment Transition in InAs/GaAsSb Quantum Dots by Photoluminescence

Journal Article · Tue May 15 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4717766· OSTI ID:1050133

Ban, Keun-Yong; Kuciauskas, Darius; Bremner, Stephen P.; Honsberg, Christiana B.

The band alignment of InAs quantum dots (QDs) embedded in GaAsSb barriers with various Sb compositions is investigated by photoluminescence (PL) measurements. InAs/GaAsSb samples with 13% and 15% Sb compositions show distinct differences in emission spectra as the PL excitation power increases. Whilst no discernible shift is seen for the 13% sample, a blue-shift of PL spectra following a 1/3 exponent of the excitation power is observed for the 15% sample suggesting a transition from a type I to type II band alignment. Time-resolved PL data show a significant increase in carrier lifetime as the Sb composition increases between 13% and 15% implying that the transformation from a type I to type II band alignment occurs between 13% and 15% Sb compositions. These results taken together lead to the conclusion that a zero valence band offset (VBO) can be achieved for the InAs/GaAsSb system in the vicinity of 14% Sb composition.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), National Science Foundation (NSF)

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1050133

Report Number(s):: NREL/JA-5200-55918; JAPIAU; TRN: US201218%%491

Journal Information:: Journal of Applied Physics, Vol. 111, Issue 10; Related Information: Article No. 104302; ISSN 0021-8979

Country of Publication:: United States

Language:: English

References (18)

Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector Stiff, A. D.; Krishna, S.; Bhattacharya, P. IEEE Journal of Quantum Electronics, Vol. 37, Issue 11 https://doi.org/10.1109/3.958360	journal	January 2001
Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells Luque, A.; Martí, A.; López, N. Applied Physics Letters, Vol. 87, Issue 8 https://doi.org/10.1063/1.2034090	journal	August 2005
Effect of strain compensation on quantum dot enhanced GaAs solar cells Hubbard, S. M.; Cress, C. D.; Bailey, C. G. Applied Physics Letters, Vol. 92, Issue 12 https://doi.org/10.1063/1.2903699	journal	March 2008
Strain-balanced GaAsP/InGaAs quantum well solar cells Ekins-Daukes, N. J.; Barnham, K. W. J.; Connolly, J. P. Applied Physics Letters, Vol. 75, Issue 26 https://doi.org/10.1063/1.125580	journal	December 1999
Electronic structure of self-assembled InAs quantum dots in GaAs matrix Brounkov, P. N.; Polimeni, A.; Stoddart, S. T. Applied Physics Letters, Vol. 73, Issue 8 https://doi.org/10.1063/1.122094	journal	August 1998
Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots Ban, Keun-Yong; Bremner, Stephen P.; Liu, Guangming Applied Physics Letters, Vol. 96, Issue 18 https://doi.org/10.1063/1.3409691	journal	May 2010
Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates Akahane, Kouichi; Yamamoto, Naokatsu; Ohtani, Naoki Physica E: Low-dimensional Systems and Nanostructures, Vol. 21, Issue 2-4 https://doi.org/10.1016/j.physe.2003.11.016	journal	March 2004
Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer Liu, H. Y.; Steer, M. J.; Badcock, T. J. Applied Physics Letters, Vol. 86, Issue 14 https://doi.org/10.1063/1.1897850	journal	April 2005
Unusual optical properties of type-II $In As ∕ Ga {As}_{0.7} {Sb}_{0.3}$ quantum dots by photoluminescence studies Chen, T. T.; Cheng, C. L.; Chen, Y. F. Physical Review B, Vol. 75, Issue 3 https://doi.org/10.1103/PhysRevB.75.033310	journal	January 2007
Radiative states in type-II GaSb/GaAs quantum wells Ledentsov, N. N.; Böhrer, J.; Beer, M. Physical Review B, Vol. 52, Issue 19 https://doi.org/10.1103/PhysRevB.52.14058	journal	November 1995
Evidence of type‐II band alignment at the ordered GaInP to GaAs heterointerface Liu, Q.; Derksen, S.; Lindner, A. Journal of Applied Physics, Vol. 77, Issue 3 https://doi.org/10.1063/1.358979	journal	February 1995
Properties of photoluminescence in type-II GaAsSb/GaAs multiple quantum wells Chiu, Y. S.; Ya, M. H.; Su, W. S. Journal of Applied Physics, Vol. 92, Issue 10 https://doi.org/10.1063/1.1513200	journal	November 2002
Temperature dependence of the energy gap in semiconductors Varshni, Y. P. Physica, Vol. 34, Issue 1 https://doi.org/10.1016/0031-8914(67)90062-6	journal	January 1967
Temperature dependent luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing Smirnov, M. B.; Talalaev, V. G.; Novikov, B. V. physica status solidi (b), Vol. 247, Issue 2 https://doi.org/10.1002/pssb.200945457	journal	February 2010
Variability of heterostructure type with thickness of barriers and temperature in the InAs/GaAsSb quantum dot system Pancholi, A.; Bremner, S. P.; Boyle, J. Solar Energy Materials and Solar Cells, Vol. 94, Issue 6 https://doi.org/10.1016/j.solmat.2010.02.002	journal	June 2010
Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer Jin, C. Y.; Liu, H. Y.; Zhang, S. Y. Applied Physics Letters, Vol. 91, Issue 2 https://doi.org/10.1063/1.2752778	journal	July 2007
Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well Ban, K. -Y.; Dahal, S. N.; Honsberg, C. B. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 3 https://doi.org/10.1116/1.3268614	journal	May 2010
The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept Luque, Antonio; MartÃ, Antonio Advanced Materials, Vol. 22, Issue 2 https://doi.org/10.1002/adma.200902388	journal	January 2010

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Title: Observation of Band Alignment Transition in InAs/GaAsSb Quantum Dots by Photoluminescence

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