Observation of Band Alignment Transition in InAs/GaAsSb Quantum Dots by Photoluminescence

Ban, Keun-Yong; Kuciauskas, Darius; Bremner, Stephen P.; Honsberg, Christiana B.

doi:10.1063/1.4717766

Observation of Band Alignment Transition in InAs/GaAsSb Quantum Dots by Photoluminescence

Journal Article · Tue May 15 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4717766· OSTI ID:1050133

Ban, Keun-Yong; Kuciauskas, Darius; Bremner, Stephen P.; Honsberg, Christiana B.

The band alignment of InAs quantum dots (QDs) embedded in GaAsSb barriers with various Sb compositions is investigated by photoluminescence (PL) measurements. InAs/GaAsSb samples with 13% and 15% Sb compositions show distinct differences in emission spectra as the PL excitation power increases. Whilst no discernible shift is seen for the 13% sample, a blue-shift of PL spectra following a 1/3 exponent of the excitation power is observed for the 15% sample suggesting a transition from a type I to type II band alignment. Time-resolved PL data show a significant increase in carrier lifetime as the Sb composition increases between 13% and 15% implying that the transformation from a type I to type II band alignment occurs between 13% and 15% Sb compositions. These results taken together lead to the conclusion that a zero valence band offset (VBO) can be achieved for the InAs/GaAsSb system in the vicinity of 14% Sb composition.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), National Science Foundation (NSF)

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1050133

Report Number(s):: NREL/JA-5200-55918

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 111; ISSN JAPIAU; ISSN 0021-8979

Country of Publication:: United States

Language:: English

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