Oxidation of ultrathin GaSe

Brumbach, Michael T.; McDonald, Anthony E.; Howell, Stephen W.; Ohta, Taisuke; Kowalski, Brian M.; Pask, Jesse A.; Kalugin, Nikolai G.; Spataru, Catalin D.

doi:10.1063/1.4934592

Oxidation of ultrathin GaSe

Journal Article · Mon Oct 26 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4934592· OSTI ID:22485972

Brumbach, Michael T.; McDonald, Anthony E.; Howell, Stephen W.; Ohta, Taisuke ^[1]; Kowalski, Brian M.; Pask, Jesse A.; Kalugin, Nikolai G. ^[2]; Spataru, Catalin D. ^[3]

Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)
Department of Materials and Metallurgical Engineering, New Mexico Tech., Socorro, New Mexico 87801 (United States)
Sandia National Laboratories, Livermore, California 94551 (United States)

Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga{sub 2}Se{sub 3} and amorphous Se. Photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

OSTI ID:: 22485972

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 107; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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