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Voltage-controlled magnetic anisotropy in Fe|MgO tunnel junctions studied by x-ray absorption spectroscopy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4934568· OSTI ID:22485935
; ; ; ;  [1]; ;  [2]
  1. Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)
  2. Japan Synchrotron Radiation Research Institute/SPring-8, Sayo, Hyogo 679-5198 (Japan)
In this study, voltage-controlled magnetic anisotropy (VCMA) in Fe|MgO tunnel junctions was investigated via the magneto-optical Kerr effect, soft x-ray absorption spectroscopy, and magnetic circular dichroism spectroscopy. The Fe|MgO tunnel junctions showed enhanced perpendicular magnetic anisotropy under external negative voltage, which induced charge depletion at the Fe|MgO interface. Despite the application of voltages of opposite polarity, no trace of chemical reaction such as a redox reaction attributed to O{sup 2−} migration was detected in the x-ray absorption spectra of the Fe. The VCMA reported in the Fe|MgO-based magnetic tunnel junctions must therefore originate from phenomena associated with the purely electric effect, that is, surface electron doping and/or redistribution induced by an external electric field.
OSTI ID:
22485935
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 107; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English