Te-doping of self-catalyzed GaAs nanowires
- Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere (Finland)
- Department of Material Science, Tampere University of Technology, FI-33101 Tampere (Finland)
- Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
Tellurium (Te)-doping of self-catalyzed GaAs nanowires (NWs) grown by molecular beam epitaxy is reported. The effect of Te-doping on the morphological and crystal structure of the NWs is investigated by scanning electron microscopy and high-resolution transmission electron microscopy. The study reveals that the lateral growth rate increases and axial growth rate decreases with increasing Te doping level. The changes in the NW morphology can be reverted to some extent by changing the growth temperature. At high doping levels, formation of twinning superlattice is observed alongside with the (111)-facetted sidewalls. Finally, the incorporation of Te is confirmed by Raman spectroscopy.
- OSTI ID:
- 22483144
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 107; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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