Twin superlattice-induced large surface recombination velocity in GaAs nanostructures

Journal Article · Mon Dec 08 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903487· OSTI ID:22395456

Sheng, Chunyang; Brown, Evan; Nakano, Aiichiro ^[1]; Shimojo, Fuyuki ^[1]

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1. Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States)

Semiconductor nanowires (NWs) often contain a high density of twin defects that form a twin superlattice, but its effects on electronic properties are largely unknown. Here, nonadiabatic quantum molecular dynamics simulation shows unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective charge-recombination centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying surface-recombination processes.

• OSTI ID: 22395456
• Journal Information: Applied Physics Letters, Vol. 105, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL STRUCTURE
DENSITY
EFFECTIVE CHARGE
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
MOLECULAR DYNAMICS METHOD
NANOWIRES
RECOMBINATION
SEMICONDUCTOR MATERIALS
SUPERLATTICES
SURFACES
VELOCITY