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Twin superlattice-induced large surface recombination velocity in GaAs nanostructures

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4903487· OSTI ID:1369913
 [1];  [1];  [2];  [1]
  1. Univ. of Southern California, Los Angeles, CA (United States)
  2. Univ. of Southern California, Los Angeles, CA (United States); Kumamoto Univ. (Japan)
Semiconductor nanowires (NWs) often contain a high density of twin defects that form a twin superlattice, but its effects on electronic properties are largely unknown. In this work, nonadiabatic quantum molecular dynamics simulation shows unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective charge-recombination centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and offers microscopic understanding of the underlying surface-recombination processes.
Research Organization:
Univ. of Southern California, Los Angeles, CA (United States). Energy Frontier Research Center (EFRC) Center for Energy Nanoscience (CEN)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0001013
OSTI ID:
1369913
Alternate ID(s):
OSTI ID: 1226592
OSTI ID: 22395456
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 105; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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