Twin superlattice-induced large surface recombination velocity in GaAs nanostructures
- Univ. of Southern California, Los Angeles, CA (United States)
- Univ. of Southern California, Los Angeles, CA (United States); Kumamoto Univ. (Japan)
Semiconductor nanowires (NWs) often contain a high density of twin defects that form a twin superlattice, but its effects on electronic properties are largely unknown. In this work, nonadiabatic quantum molecular dynamics simulation shows unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective charge-recombination centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and offers microscopic understanding of the underlying surface-recombination processes.
- Research Organization:
- Univ. of Southern California, Los Angeles, CA (United States). Energy Frontier Research Center (EFRC) Center for Energy Nanoscience (CEN)
- Sponsoring Organization:
- USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- SC0001013
- OSTI ID:
- 1369913
- Alternate ID(s):
- OSTI ID: 1226592
OSTI ID: 22395456
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 105; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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