Dual role of boron in improving electrical performance and device stability of low temperature solution processed ZnO thin film transistors

Journal Article · Mon Oct 12 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4933304· OSTI ID:22482242

Gandla, Srinivas; Gollu, Sankara Rao; Sharma, Ramakant; Sarangi, Venkateshwarlu; Gupta, Dipti ^[1]

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1. Plastic Electronics and Energy Laboratory (PEEL), Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

In this paper, we have demonstrated the dual role of boron doping in enhancing the device performance parameters as well as the device stability in low temperatures (200 °C) sol-gel processed ZnO thin film transistors (TFTs). Our studies suggest that boron is able to act as a carrier generator and oxygen vacancy suppressor simultaneously. Boron-doped ZnO TFTs with 8 mol. % of boron concentration demonstrated field-effect mobility value of 1.2 cm{sup 2} V{sup −1} s{sup −1} and threshold voltage of 6.2 V, respectively. Further, these devices showed lower shift in threshold voltage during the hysteresis and bias stress measurements as compared to undoped ZnO TFTs.

• OSTI ID: 22482242
• Journal Information: Applied Physics Letters, Vol. 107, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABUNDANCE
BORON
CARRIERS
CONCENTRATION RATIO
DOPED MATERIALS
ELECTRIC POTENTIAL
HYSTERESIS
MOBILITY
OXYGEN
PERFORMANCE
SOL-GEL PROCESS
STABILITY
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TRANSISTORS
VACANCIES
ZINC OXIDES