Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

Journal Article · Mon Sep 27 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1790587· OSTI ID:20634296

Fortunato, Elvira M.C.; Barquinha, Pedro M.C.; Goncalves, Alexandra M.F.; Marques, Antonio J.S.; Martins, Rodrigo F.P.; Pereira, Luis M.N. ^[1]

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1. Department of Materials Science/CENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica (Portugal)

We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a saturation mobility of 27 cm{sup 2}/V s, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3x10{sup 5}. The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics.

• OSTI ID: 20634296
• Journal Information: Applied Physics Letters, Vol. 85, Issue 13; Other Information: DOI: 10.1063/1.1790587; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRON MOBILITY
GLASS
MAGNETRONS
PERFORMANCE
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSISTORS
ULTRAVIOLET SPECTRA
VISIBLE SPECTRA
ZINC OXIDES