A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN
- Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601 (Japan)
We have demonstrated the pulsed operation of a 350-nm-band ultraviolet laser diode with a vertical current path. The laser structure was grown on a (0001)-face bulk GaN substrate. The lasing wavelength was 356.6 nm and the peak output power reached to 10 mW from the one side of uncoated facets under pulsed current operation with a pulse duration of 10 ns and a repetition frequency of 5 kHz at room temperature. The GaN substrate is expected to provide a cleaved facet configuration leading to an excellent far-field pattern as well as an advantageous thermal management solution of the devices relative to sapphire substrates. The far-field pattern of actual device on GaN substrate has been improved dramatically compared with distorted one on that of sapphire substrates.
- OSTI ID:
- 22482231
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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