Depth-dependent phase change in Gd{sub 2}O{sub 3} epitaxial layers under ion irradiation
- Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Univ. Paris-Sud, CNRS, Université Paris-Saclay, Bâtiment 108, 91405 Orsay Cedex (France)
- CEA-Saclay, DEN-DMN-SRMA-LA2M, Gif/Yvette (France)
- Science des Procédés Céramiques et de Traitements de Surface CNRS UMR 7315, Centre Européen de la Céramique, 12 rue Atlantis, 87068 Limoges (France)
- Translucent Inc., 952 Commercial St., Palo Alto, California 94303 (United States)
Epitaxial Gd{sub 2}O{sub 3} thin layers with the cubic structure were irradiated with 4-MeV Au{sup 2+} ions in the 10{sup 13}–10{sup 15} cm{sup −2} fluence range. X-ray diffraction indicates that ion irradiation induces a cubic to monoclinic phase change. Strikingly, although the energy-deposition profile of the Au{sup 2+} ions is constant over the layer thickness, this phase transformation is depth-dependent, as revealed by a combined X-ray diffraction and ion channeling analysis. In fact, the transition initiates very close to the surface and propagates inwards, which can be explained by an assisted migration process of irradiation-induced defects. This result is promising for developing a method to control the thickness of the rare-earth oxide crystalline phases.
- OSTI ID:
- 22482165
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 107; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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